VTP Process Photodiodes VTP4085SH
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Operating Temperature: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTP4085H
VTP4085SH
UNITS
Min.
Typ.
Max.
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850
200
200
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.20
.20
%/°C
ISC
Short Circuit Current
100 µW/cm2, 940 nm
11.4
15
11.4
15
µA
VOC
Open Circuit Voltage
H= 100 fc, 2850K
.33
.33
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 100 V
100
15
50
nA
RSH
Shunt Resistance
H = 0, V = 10mV
2.0
4.0
MW
TC RSH
RSHTemperature Coefficient
H= 0, V = 10mV
-11
-11
%/°C
CJ
JunctionCapacitance
H = 0, V = 0V
.35
.35
nF
λrange
Spectral Application Range
400
1100
400
1100
nm
λp
Spectral Response - Peak
925
925
nm
SR
Sensitivity
@ Peak
.55
.55
A/W
商品属性 [波长] 400-1100nm