SILICON PHOTODIODE VTP8840STRH
FEATURES
· Surface mount package · Low capacitance · Fast response · High shunt impedance · Tape & reel supplied
ELECTRO-OPTICAL CHARACTERISTICS @ 25° C
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
SHORT CIRCUIT CURRENT @ 100 fc, 2850 K
ISC
50
60
mA
DARK CURRENT @ VR = 10 V
ID
20
nA
SHUNT RESISTANCE @ H = 0, V = 10 mV
RSH
0.25
GW
JUNCTION CAPACITANCE @ VR = 3 V
CJ
50
pF
OPEN CIRCUIT VOLTAGE @ 100 fc, 2850 K
VOC
325
mV
ANGULAR RESPONSE (50% RESPONSE POINT)
θ1/2
±42
Degrees
PACKAGE DIMENSIONS inch (mm)
GENERAL CHARACTERISTICS
PARAMETER
SYMBOL
TYPICAL RATING
UNITS
PEAK SPECTRAL RESPONSE @ 25°C
λP
925
nm
RADIOMETRIC SENSITIVITY @ PEAK, 25°C
SRPK
0.6
A / W
NOISE EQUIVALENT POWER
NEP
2.0 x 10-13
W/√Hz
SPECIFIC DETECTIVITY
D*
1.2 x 1012
cm√Hz/W
TEMPERATURE COEFFICIENT
SHORT CIRCUIT CURRENT @ 2850 K SOURCE
OPEN CIRCUIT VOLTAGE @ 2850 K SOURCE
DARK CURRENT
TC ISC
TC VOC
TC ID
+0.22
- 2.0
+15.0
%/°C
mV/C
%/°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNITS
TEMPERATURE RANGE OPERATING AND STORAGE
TAMB
- 40 to +85
°C
LEAD SOLDER TEMPERATURE (1.6 mm FROM CASE, 5 SECONDS MAX.)
TLS
260°
°C
BREAKDOWN VOLTAGE @ 25°C
VBR
33
Volts
POWER DISSIPATION
PD
150
mW
TYPICAL CHARACTERISTIC CURVES
Specifications subject to change without prior notice. Information supplied by Excelitas Technologies is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. The user should determine the suitability of this product in his own application. No patent rights are granted to any devices or circuits described herein.
商品属性 [波长] 925nm