YAG series − YAG-100AH, YAG-200H and YAG-444AH
Long Wavelength Enhanced Silicon PIN Photodiodes
Key Features and Benefits
- Planar Diffused
- Large Area
- Wide Dynamic Rage
- >50% DC Quantum Efficiency at 1064 nm
- >38% Pulsed Quantum Efficiency at
1064 nm with 20 ns Pulse Width
- Wide Spectral Range
- >90% DC Quantum Efficiency at 900 nm
- Peak Responsivity: 0.7 A/W at 1000 nm
Applications
- Instrumentation
- Laser range finding
- Laser warning receivers
- Missile guidance systems
The YAG series are high-performance P-type Si PIN photodiodes in hermetically sealed TO packages. These photodiodes perform well over the 400 nm to 1100 nm wavelength range and use a thicker Si material for enhanced IR responsivity, making them ideal for 1064 nm detection applications, while maintaining fast response time.
A guard ring has been implemented to collect the higher surface leakage current of a P-type detector. This also serves to collect current generated outside the active area, ensuring the current will not contribute to noise. This is advantageous for applications when the entire chip is illuminated or when nuclear particles outside the active area could create noise.
Recognizing that different applications have different performance requirements, Excelitas offers a wide range of customization of these photodiodes to meet your design challenges. Responsivity and noise screening, N-type variants, YAG-optimized anti-reflection coatings (ARC) on the window, varying pin length and custom device testing and packaging are among many of the application specific solutions available.
Table 1 - Mechanical and Optical Characteristics
Parameter
YAG-100AH
YAG-200H
YAG-444AH
Unit
Shape
Circular, single element
Circular, single element
Circular, single element
Photosensitive Surface: Useful area
Useful diameter
4.9
2.5
20
5.1
100
11.3
mm² mm
Package
TO-5
TO-8
TO-36
Window Type
Glass
Glass
Glass
Table 2 ̶ Electro-Optical Characteristics
Operating data and specifications at 23˚C − typical performance at 180V voltage bias
YAG-100AH
YAG-200H
YAG-444AH
Units
Parameter
Symbol
Min
Typical
Max
Min
Typical
Max
Min
Typical
Max
Active area
A
5.1
20
100
mm²
Spectral range
400
1150
400
1150
400
1150
nm
Responsivity
at 1000 nm
at 1064 nm
at 1064 nm (window ARC)
R
0.70
0.44
0.47
0.70
0.44
0.47
0.70
0.44
0.47
A/W
Bandwidth (1060nm, 50Ω load)
30
30
30
MHz
Rise time, RL = 50Ω
tr
12
12
12
ns
Operating voltage
Vop
0
180
0
180
0
180
V
Breakdown voltage1
Vbr
200
200
200
V
Capacitance
Cd
2.5
6.0
35
pF
Dark current
id
11
20
25
100
80
200
nA
Channel resistance
>1.0
>1.0
>1
MΩ
Series resistance
Rs
100
100
100
Ω
Noise current
in
0.06
0.09
0.16
pA/√Hz
Noise equivalent power
(1000 nm, 1 MHz)
NEP
0.08
0.13
0.23
pW/√Hz
Response linearity
<1%
<1%
<1%
Over 7
decades
Operating Temperature
To
-55
125
-55
125
-55
125
°C
Field of View: (See Figure 6)
Nominal field of view α
Nominal field of view α’
FoV
1
95
135
155
105
160
Degrees
Figure 1 ̶ Typical Spectral Response
Figure 2 ̶ Typical increase in responsivity as a function of photodiode temperature
Figure 3 ̶ YAG-100AH Package Dimensions (reference only and subject to change without notice)
Figure 4 ̶ YAG-200H Package Dimensions (reference only and subject to change without notice)
Figure 5 ̶ YAG-444AH Package Dimensions (reference only and subject to change without notice)
Figure 6 ̶Approximate field of view
商品属性 [波长] 400-1100nm [封装方式] TO-5