PDI-8P50-2G-K-R50
PIN photodiode module, 1000-1650 nm, 2 GHz, 50 mW
DESCRIPTION
This detector module works in the spectral range 1000 - 1650 nm at the input power up to 50 mW at frequencies up to 2 GHz. It is equipped with an SM fiber and provides low back reflection < -50 dB. Small size and weight allow for installing it on a PCB without additional mounting.
Applications: high-speed optical communication systems.
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
PD reverse voltage, Vr
20
V
Operating temperature, Tc
-40 ÷ +80
°C
Storage temperature, Tstg
-40 ÷ +85
°C
Optical power, P
50
mW
ELECTRICAL-OPTICAL CHARACTERISTICS (SINGLE MODE, T = 25 °C)
Parameter
Min
Typ
Max
Unit
Test conditions
Responsivity
Sλ
0.85
0.9
A/W
λ = 1550 nm, VR = 3 V
Operating voltage
Vop
3
5
V
Back reflection
RL
-50
dB
λ = 1550 nm
Dark current
Id
0.03
0.16
nA
VR = 3 V
Chip capacitance
Cchip
0.65
0.8
pF
VR = 3 V, f = 1 MHz
Total capacitance
Ct
0.95
1.1
pF
VR = 3 V, f = 1 MHz
Cut-off frequency
fc
2
GHz
Pi = -10 dBm, VR = 3 V, RL = 50 Ω,Small signal modulation
ORDERING INFORMATION
商品属性 [波长] 1000-1650 nm [功率] 50 mW