HL63133DG
638nm / 170mW AlGaInP Laser Diode
Features
• Visible light output: 638nm Typ.
• Optical output power: 170mW (CW)
• Single transverse mode
• Low operating current: 250mA Typ.
• Low operating voltage: 2.8V Typ.
• Small package: Ø5.6mm
• TE mode oscillation
Application
• Pico projector
• Show laser
• Light source of optical equipments
Absolute Maximum Ratings (Tc=25°C)
Item
Symbol
Ratings
Unit
Optical output power
Po
170
mW
LD Reverse Voltage
VR(LD)
2
V
Operating Temperature
Topr
-10 ~ +40
°C
Storage Temperature
Tstg
-40 ~ +85
°C
Note: Operating temperature is defined by Case temperature “Tc”. High increase in temperature of LD chip itself is expected during operation
due to high current density. Thus, without proper heat dissipation, it is observed that no specific output power is achieved or it results to LD degration.
It is advised that sufficient measure of heat dissipation should be taken so that LD’s maximum operating temperature is not exceeded during actual operation.
Optical and Electrical Characteristics (Tc=25°C)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Threshold current
Ith
-
60
90
mA
-
Operating current
Iop
-
250
320
mA
Po=170mW
Operating voltage
Vop
-
2.8
3.2
V
Po=170mW
Beam divergence Parallel to the junction
θ//
5
9
13
°
Po=170mW, FWHM
Beam divergence Perpendicular to the junction
θ⊥
13
17
23
°
Po=170mW, FWHM
Lasing Wavelength
λp
632
638
643
nm
Po=170mW
Typical Characteristic Curves
商品属性 [波长] 638nm [功率] 170mW [封装方式] Ø5.6mm