HL63163DG
633nm /100mW AlGaInP Laser Diode
Features
•Shorter wavelength: 633nm Typ.
•High optical output power: 100mW
•Low operating current: 170mA Typ.
•Small package: Ø5.6mm
•Single transverse mode
•TE mode oscillation
Application
• Medical
• Industry
• Light source of optical equipment
Absolute Maximum Ratings (Tc=25°C)
Item
Symbol
Ratings
Unit
Optical output power
Po
100
mW
LD Reverse Voltage
VR(LD)
2
V
Operating Temperature
Topr
-10 ~ +40
°C
Storage Temperature
Tstg
-40 ~ +85
°C
Optical and Electrical Characteristics (Tc=25°C)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Threshold current
Ith
-
70
100
mA
-
Operating current
Iop
-
170
230
mA
Po=100mW
Operating voltage
Vop
-
2.6
3.0
V
Po=100mW
Beam divergence Parallel to the junction
θ//
5
8.5
13
o
Po=100mW, FWHM
Beam divergence Perpendicular to the junction
θ⊥
13
18
23
o
Po=100mW, FWHM
Lasing Wavelength
λp
630
633
636
nm
Po=100mW
Typical Characteristic Curves
商品属性 [波长] 633nm [功率] 100mW [封装方式] Ø5.6mm