HL63283HD
637nm /1.2W (CW) /1.5W (Pulse) AlGaInP Laser Diode
Features
• Single emitter
• Optical output power: 1.2W (CW) 1.5W (Pulse)
• Shorter wavelength: 637nm Typ.
• High wall plug efficiency: 40% Typ.
• High heat dissipation Ø9mm CAN package
• Multi transverse mode
• TM mode oscillation
Application
• Laser Projector
• Show Laser
• Light source of optical equipments
Absolute Maximum Ratings (Tc=25°C)
Item
Symbol
Ratings
Unit
Optical output power Note3)
Po
1.2
W
Pulse optical output power Note2) Note3)
Po(Pulse)
1.5
W
LD reverse voltage
VR(LD)
2
V
Operating temperature Note3)
Topr
-10 ~ +45
°C
Storage temperature
Tstg
-40 ~ +85
°C
Note1) Operating temperature is defined by Case temperature “Tc”. High increase in temperature of LD chip itself is expected during operation due to high current density. Thus, without proper heat dissipation, it is observed that no specific output power is achieved or it results to LD degradation. It is advised that sufficient measure of heat dissipation should be taken so that LD’s maximum operating temperature is not exceeded during actual operation.
Note2) Pulse condition: Pulse frequency³50Hz, duty=33%
Note3) The relation of optical output power vs operating temperature is based on Fig.1.
Optical and Electrical Characteristics (Tc=25°C)
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Threshold current
Ith
-
340
440
mA
-
Operating current
Iop
-
1300
1600
mA
Po=1.2W
Operating voltage
Vop
-
2.3
2.7
V
Po=1.2W
Beam divergence Note4)
Parallel to the junction
θ//
3
10
20
°
Po=1.2W, FWHM
Beam divergence Note4)
Perpendicular to the junction
θ⊥
23
33
43
°
Po=1.2W, FWHM
Lasing Wavelength
λp
632
637
641
nm
Po=1.2W
Note4) Designed value
Typical Characteristic Curves
商品属性 [波长] 637nm [功率] 1.2W (CW) /1.5W (Pulse) [封装方式] Ø9.0mm