Alternate Source/Second Source Photodiodes VTD34H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these
devices side by side. These photodiodes are designed to provide excellent sensitivity at low levels of irradiance.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 80°C
Operating Temperature: -20°C to 80°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTD34H
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
1000 Lux, 2850K
50
70
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.20
%/°C
VOC
Open Circuit Voltage
H= 1000 Lux, 2850K
300
365
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 10 V
2
30
nA
CJ
JunctionCapacitance
@ 1MHz, VR = 0V
60
pF
tR/tF
Rise/Fall Time @1 kW Lead
VR = 10V, 833 nm
50
nsec
SR
Sensitivity
@ Peak
0.60
A/W
λrange
Spectral Application Range
400
1100
nm
λp
Spectral Response - Peak
900
nm
VBR
Breakdown Voltage
40
V
θ1/2
Angular Resp.-50%Resp. Pt.
±50
Degrees
NEP
Noise Equivalent Power
4.8 x 10-14
W /√ Hz
D*
Specific Detectivity
5.7 x 1012
cm √Hz / W
商品属性 [波长] 400-1100nm