Alternate Source/Second Source Photodiodes VTD34FH
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic package. The package material filters out visible light but passes infrared. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. The photodiodes are designed to provide excellent sensitivity at low levels of irradiance
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 80°C
Operating Temperature: -20°C to 80°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTD34FH
UNITS
Min.
Typ.
Max.
Re
Responsivity
0.5 mW/cm2, 940 nm
15
µA
VOC
OpenCircuit Voltage
0.5 mW/cm2, 940 nm
275
350
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR= 10V
2
30
nA
CJ
JunctionCapacitance
@ 1 MHz, VR = 0 V
60
pF
tR/tF
Rise/Fall Time @1 kW Lead
VR = 10 V, 833 nm
50
nsec
SR
Sensitivity
@ Peak
0.60
A/W
λrange
Spectral ApplicationRange
725
1150
nm
λp
Spectral Response - Peak
940
nm
VBR
Breakdown Voltage
40
V
θ1/2
Angular Resp.-50%Resp. Pt.
±50
Degrees
NEP
Noise Equivalent Power
4.8 x 10-14
W/√Hz
D*
Specific Detectivity
5.7 x 1012
cm √Hz /W
商品属性 [波长] 725-1150nm