C30659-UV-1
UV APD Preamplifier Module
Excelitas’ C30659-UV-1 APD Preamplifier Module enables high responsivity at 500 nm and offers a very low noise floor.
Excelitas Technologies’ C30659-UV-1 includes a UV enhanced Si Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically- sealed TO-8 package, to allow for ultra low noise operation.
The UV Enhanced Si APDs provide very good response between 400 nm and 950 nm and have very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than our regular C30950 Series.
The C30659 is pin-to-pin compatible with the C30950 Series with a negative output. An emitter follower is used as an output buffer stage. To obtain the wideband characteristics, the output of these devices should be capacitively- or AC-coupled to a 50 Ω termination. The module must not be DC-coupled to loads of less than 2,000 Ohms. For field use, it is recommended that a temperature-compensated HV supply be employed to maintain a constant responsivity over temperature.
Customization of the C30659 Series of APD Preamplifier Modules is available to meet your specific design challenges.
Key Features
· 50 MHz system bandwidth
· Ultra low noise equivalent power (NEP)
· Blue enhanced spectral response range
· Power consumption: 150 mW typ
· ±5 V amplifier operating voltages
· 50 Ω AC load capability
· Hermetically-sealed TO-8 package
· High reliability
· Pin-to-pin compatible with the C30950 & C30659 Series
· Light entry angle, over 130°
· RoHS-compliant
Applications
· Fluorescence detection
· High energy physics
· Safety radiation detection
· Optical tomography
· Environmental monitoring
Table 1. Performance Specifications
Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled)
Parameter
Min
Typical
Max
Units
Active area
1 x 1
mm²
Bandwidth range
50
MHz
Temperature coefficient of Vop for constant gain
1.0
V/˚C
Vop for specified responsivity
350
Note 1
430
V
Temperature sensor sensitivity (Note 2)
-1.8
-2.1
-2.4
mV/˚C
Responsivity
at 500 nm
Rf (Internal feedback resistor)
3000
82
kV/W
kΩ
Noise equivalent power (NEP) (Note 3)
Average from 100 kHz to f-3dB, ∆f = 1.0 Hz
at 500 nm
Output spectral noise voltage
Averaged from 100 kHz to f-3dB
10
30
12
35
fW/√Hz
nV/√Hz
Output impedance
33
40
50
Ω
System bandwidth, f-3dB
40
50
MHz
Rise time, tr (l = 500 nm) 10% to 90% points
7
ns
Fall time, tf (l = 500 nm) 90% to 10% points
7
ns
Output voltage swing (1 kΩ load) (Note 4)
2
3
V
Output voltage swing (50 Ω load) (Note 4)
0.7
0.9
V
DC output offset voltage
-1
0.25
1
V
Positive supply current (V+)
20
35
mA
Negative supply current (V-)
10
20
mA
Notes:
1. A specific value of Vop is supplied with each device. The Vop value will be within the specified range.
2. If = 0.1 mA at 25˚C.
3. NEP is the calculated as the average output spectral noise voltage divided by the typical responsivity.
4. Pulsed operation.
Table 2. Absolute – Maximum Ratings, Limiting Values
Parameter
Min
Max
Units
Photodiode bias voltage
at TA = +70˚C
at TA = -40˚C
600
300
V
V
Case temperature
storage, Tstg
operating, TA
-50
-40
100
70
˚C
˚C
Preamplifier bias voltage
±4.5
±5.5
V
Figure 1. Schematic Block Diagram − C30659 Series
Figure 2. Typical Spectral Responsivity
Figure 3. Typical Noise and Frequency
Output voltage noise normalization is calculated using the following formula:
Figure 4. Mechanical Characteristics – C30659 Series − reference dimensions shown in mm (inches)
Pin #
Description
1
Output signal
2
No connection
3
-Vcc negative amplifier bias
4
Positive high voltage (HV)
5
No connection
6
Case ground
7
No connection
8
Temperature sensing diode – anode
9
Temperature sensing diode – cathode
10
Ground, DC returns
11
No connection
12 +Vcc positive amplifier bias
Figure 5. Optical Geometry – C30659 Series − reference dimensions shown
商品属性 [波长] 500 nm [封装方式] TO-8