C30985E
25-Element Silicon Avalanche Photodiode (Si APD) Linear Array
The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as fast rise and fall times at all wavelengths.
Because the fall time characteristic has no “tail”, the responsivity of the C30985E is independent of modulation frequency up to 200 MHz.
The C30985E is hermetically sealed behind a flat glass window in a low profile rectangular 34 pin package.
Recognizing that different applications have different performance requirements, Excelitas offers a range of customization options for this Si APD array to meet your design challenges. Operating and breakdown voltage selection, dark current and NEP screening, custom device testing and packaging are among many of the application-specific solutions available.
A 12- and 20-element array are also available as custom options.
Key Features
· High quantum efficiency
· Fast response time
· Wide operating temperature range
· Standard AR coating for 800 - 1060 nm optimal response
Applications
· LIDAR /LADAR
· 3D LIDAR mapping
· Analytical instrumentation
Table 1 Electrical Characteristics at TA = 22C
Parameter
Minimum
Typical
Maximum
Unit
Breakdown voltage, VBR
350
450
525
V
Operating voltage 1, VR
275
-
425
Operation point from breakdown (VBR-VR), ∆V
-
100
-
V
Temperature coefficient of VR for constant Gain
-
2.4
-
V/°C
Gain, M
-
50
-
Element to element gain non-uniformity
-
+/- 15
+/- 20
%
Responsivity
At 900 nm
At 1060 nm
25
6
31
7.5
-
-
A/W
Quantum efficiency, QE
At 900 nm
At 1060 nm
-
-
85
18
-
-
%
Dark Current, iD
Guard Ring
Each Element
-
-
100
1
300
-
nA
Noise current, in
F = 10kHz, ∆f = 1.0Hz
All Elements
Each Element
-
-
0.5
0.1
1.0
0.3
pA/Hz ½
Capacitance, Cp
Total
Each Element
Interelectrode
-
-
-
15
0.5
0.2
-
-
-
pF
Series Resistance
Each Element
-
-
100
Ω
Rise Time, tτ
RL = 50 Ω, λ = 900nm
10% to 90% points
-
2
3.5
ns
Fall Time
RL = 50 Ω, λ = 900 nm
90% to 10% points
-
2
3.5
Ns
Operating Temperature
-40
+70
°C
Storage Temperature
-60
+100
°C
1At the DC reverse operating voltage (VR) supplied with the device and a light spot diameter of 0.025 mm (0.001”) centered on a typical element, unless otherwise specified. When the photodiode is operated at this specified operating voltage (VR), the device will meet the electrical characteristic limits shown above.
Table 2 Maximum Ratings
Parameter
Value
Unit
Reverse Bias Current, Total
200
μA
Photocurrent density (Jp) @ 22⁰C
Average Value, continuous operation
Peak Value
5
20
mA/mm2
mA/mm2
Forward current (IF) @ 22⁰C
Average Value, continuous operation
Peak Value
5
50
mA
mA
Maximum total electrical power dissipation@ 22⁰C
0.1
W
Soldering for 5 seconds
200
⁰C
Table 3 Mechanical Characteristics – Photosensitive Surface
Parameter
Value
Unit
Total Active Length
7.5
mm
Useful Active width
0.3
mm
Center-to-Center Spacing
0.3
mm
Dead Space between elements (typical)
75
μm
Dimensional outline and pin connections
商品属性 [波长] 800 - 1060 nm [封装方式] 34 pin