C30956EH
Long Wavelength Enhanced Silicon Avalanche Photodiodes
Excelitas’ C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these photodiodes is such that their long wave response (i.e. > 900 nm) has been enhanced without introducing any undesirable properties.
These APDs have quantum efficiency of up to 40% at 1060 nm. At the same time, the diodes retain the low noise, low capacitance, and fast rise and fall times characteristics.
Standard versions of these APDs are available in hermetically-sealed, flat top glass TO-5 packages for the smaller area C30954EH and C30955EH, and a TO-8 package for the larger area C30956EH.
To help simplify many design needs, these Si APDs are also available in Excelitas’ high-performance hybrid preamplifier module, C30659 Series, as well as the preamplifier and Thermo-electric (TE) cooler incorporated module, the LLAM Series.
Recognizing that different applications have different performance requirements, Excelitas offers a wide range of customization options for these APDs to meet your design challenges. TE cooler-packaged versions are available on a custom basis. Operating and breakdown voltage selection, dark current and NEP screening, custom device testing and packaging are among the many application-specific solutions available.
Key Features
· High Quantum Efficiency at 1060nm
· Fast Response Time
· Wide operating Temperature Range
· Hermetically sealed packages
Applications
· Range finding
· LIDAR
· YAG Laser Detection
Table 1 Mechanical and Optical Characteristics
Parameter
Symbol
C30954EH
C30955EH
C30956EH
Unit
Shape
Circular
Circular
Circular
Package
TO-5
TO-5
TO-8
Photosensitive Surface:
Useful area
Useful diameter
A
d
0.5
0.8
1.77
1.5
7
3
mm2
mm
Field of View:
Nominal field of view α (see Figure 10) Nominal field of view α’ (see Figure 10)
FoV
110
125
104
130
135
150
Degrees
Table 2 Electro-Optical Characteristics
Case Temperature TA = 22 °C; at the DC reverse operating voltage V, Vop 1
Parameter
Symbol
C30954EH
C30955EH
C30956EH
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Breakdown Voltage
Vbr
300
375
475
315
390
490
325
400
500
V
Temperature Coefficient of Vop for Constant M
Vop
2.4
2.4
2.4
V/°C
Gain
M
120
100
75
Responsivity
at 900 nm
at 1060 nm
at 1150 nm
R
65
30
4
75
36
5
55
26
4
70
34
5
36
20
2.8
45
25
3.5
A/W
Quantum Efficiency
at 900 nm
at 1060 nm
at 1150 nm
Q.E.
85
36
5
85
40
5
85
40
5
%
Total Dark Current
Id
50
100
100
200
100
200
nA
Noise Current
f=10kHz, Δf=1.0Hz
in
1
2
1
2
1.1
2.2
pA/√Hz
Capacitance
Cd
2
4
3
5
10
12
pF
Series resistance
Rs
15
15
15
Ω
Rise/Fall Time, RL = 50Ω:
10% to 90% points
90% to 10% points
tr
tf
2
2
3
3
2
2
3.5
3.5
2
2
3.5
3.5
ns
1 A specific value of VR is supplied with each device. When the photodiode is operated at this voltage, the device will meet the electrical characteristic limits shown above. The voltage value will be within the range of 275 to 450 volts.
Table 3 Absolute – Maximum Ratings, Limiting Values
Parameter
Symbol
Minimum
Typical
Maximum
Unit
Remarks/Conditions
Reverse Bias Current
200
μA
Photocurrent Density :
average value
Jp
5
mA/mm2
Continuous operation
peak value
20
Forward Current:
average value
peak value
IF
5
50
mA
Continuous operation(For 1 second duration, non-repetitive)
Storage Temperature
Tstg
-60
100
°C
Operating Temperature
To
-40
70
°C
Soldering
260
°C
5 seconds, leads only
Dimensional Outline (C30956EH Types) Low-Profile TO-5 Package, dimensions in mm (inch)
商品属性 [波长] 1060nm [封装方式] TO-8