C30739ECERH
Short Wavelength Enhanced Silicon Avalanche Photodiode
The C30739ECERH large area silicon avalanche photodiode (APD) is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700nm.
The device is designed to have enhanced short wavelength responsivity with quantum efficiency typically exceeding 80% at 430nm. In addition, this large area APD is optimized for low noise and low capacitance (60pF). Operation at an avalanche gain of up to M = 400 at 430nm is feasible with a special high gain version.
The standard ceramic carrier package allows for easy handling and coupling to scintillating crystals such as LSO and BGO. Combined with the superior short wavelength responsivity, it makes this APD ideal in demanding high volume applications such as Positron Emission Tomography (PET).
While the devices are warranted over the entire specification, customers are welcome to discuss their custom requirements to accommodate special design, packaging or testing needs.
Key Features
· Large area silicon APD
· Short Wavelength enhanced responsivity
· High quantum efficiency (80%) at short wavelength(430nm)
· Easy coupling to scintillating crystals
· Non-magnetic package
· Custom packaging available
· Excellent timing resolution
· RoHS compliant
Applications
· Molecular imaging (PET)
· Nuclear medicine
· Fluorescence detection
· High energy physics
· Safety radiation detection
· Optical tomography
· Environmental monitoring
Table 1 – Package and Chip Dimensions
Parameter
Measurement
Unit
Package Size
8.50 x 8.00 x 1.55
mm
Chip size
6.65 x 6.65
mm
Active area
5.6 x 5.6
mm
Table 2 – Electrical Characteristics, at TA = 22 °C; at typical dV
Symbol
Parameter
C30739ECERH
(standard version)
C30739ECERH-2
(high gain version)
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
Vop
Operating Voltage
-
400
420
-
400
450
V
dV
dV = Vbr - Vop
-
15
-
-
10
-
V
defines relation of operating voltage Vop to
breakdown voltage Vbr
M
Gain at Vop
80
100
-
180
200
-
Q.E.
Quantum
Efficiency
65
80
-
65
80
-
%
at 430 nm
R
Responsivity
-
26
-
-
52
-
A/W
at 430 nm and Typical
Gain M
Tcoeff
Temp. Coefficient
for constant gain
1.2
1.2
V/°C
CJ
Capacitance
-
60
-
-
60
-
pF
at Vop
tR
Rise Time
-
2
-
-
2
-
ns
ID
Dark Current
-
1.5
-
-
2
-
nA
at Vop
IN
Noise Current
-
0.3
-
-
0.4
-
pA/√Hz
at Vop
Table 3 – Maximum ratings
Parameter
Min
Typical
Max
Unit
Operating Temperature
0
-
50
°C
Storage Temperature
-20
-
70
°C
Maximum Humidity (non-condensing)
-
-
60
%
商品属性 [波长] 400 to 700nm