C30737PH, CH, LH, MH and EH Series
Silicon Avalanche Photodiodes (APDs) for LIDAR, range finding and laser meters – plastic, leadless ceramic and FR4 packages
Excelitas’ C30737 Series APDs are ideally suited to automotive LIDAR, laser meter, laser range finding and area scanning applications, providing high responsivity in the 500 – 1000 nm range.
The Excelitas C30737 series silicon avalanche photodiodes (APDs) provide high responsivity between 500nm and 1000nm, as well as extremely fast rise times at all wavelengths with a cut-off frequency >1 GHz for some versions.
Standard versions of these APDs are available in two active area sizes: 230µm and 500µm diameter. They are offered in a metal TO-18 and plastic T1-¾ through-hole packages (C30737EH and PH), in leadless ceramic-carrier (LCC) surface-mount “side-looking” and “top-looking” packages (C30737CH and LH), and in a surface-mount “top-looking” leadless FR4 package (C30737MH). The EH and LH packages comes with clear glass or built-in 635nm, 650nm, or 905nm filter window versions. The MH package is only 1.75 x 2.0mm. These package varieties are ideally suited for high volume, cost-effective applications where a high gain APD is required.
The leadless, ceramic-carrier (LCC) SMD package parts (C30737CH, LH and MH series) are available in tape-and-reel pack for SMT-compatible, RoHS- compliant reflow soldering.
Customizations of these APDs are offered to meet your design challenges. Options for these APDs include breakdown voltage selection (binning).
Key Features
· High gain at low bias voltage
· Low breakdown voltage
· Fast response, tr ~ 200 ps for high-speed applications
· Low noise ~ 0.1pA/√ Hz
· Optimized versions for high responsivity and high bandwidth
· Two standard diameters: 230µm and 500µm
· Built-in band-pass filter windows
· NEW ultra-compact and low- cost “MH” SMT package
· “Tape-and-Reel” packaging format for automated SMD pick-and-place
Applications
· Automotive LIDAR
· 905nm range-finding devices
· 635nm and 650nm laser meters
· Speed measurement
· Area scanners for safety, surveillance, automatic door opening
· Optical communication
· 3D laser scanning
· Gesture recognition
Table 1. Electrical Characteristics at TA = 22 °C; at operating voltage-Vop – unfiltered devices
Parameter
C30737PH-230-80
C30737CH-230-80
C30737LH-230-80
C30737MH-230-80
C30737EH-230-80
C30737PH-500-80
C30737CH-500-80
C30737LH-500-80
C30737MH-500-80
C30737EH-500-80
Min
Typical
Max
Min
Typical
Max
Unit
Active Area Diameter
230
500
μm
Peak Sensitivity Wavelength
800
800
nm
Breakdown Voltage, VBR
120
210
120
210
V
Temperature Coefficient of VR, for Constant M
-
0.5
-
-
0.5
-
V/°C
Gain (M) @ 800nm
-
100
-
-
100
-
Responsivity @ 800 nm
-
50
-
-
50
-
A/W
Total Dark Current, Id
-
0.05
0.5
-
0.1
1
nA
Noise Current, In, f=10kHz, Δf=1.0Hz
-
0.1
-
-
0.1
-
pA/√Hz
Capacitance, Cd
-
1
-
-
2
-
pF
Rise + Fall Time,
RL=50 Ω, 10%-90%-10% points
-
0.2
-
-
0.3
-
ns
Cut-off frequency (-3 dB)
-
1.5
-
-
1.3
-
GHz
Storage Temperature
-50
+100
-50
+100
°C
Operating Temperature
-40
+85
-40
+85
°C
Parameter
C30737PH-230-90
C30737CH-230-90
C30737LH-230-90
C30737MH-230-90
C30737EH-230-90
C30737PH-500-90
C30737CH-500-90
C30737LH-500-90
C30737MH-500-90
C30737EH-500-90
Min
Typical
Max
Min
Typical
Max
Unit
Active Area Diameter
230
500
μm
Peak Sensitivity Wavelength
900
900
nm
Breakdown Voltage, VBR
180
260
180
260
V
Temperature Coefficient of VR, for Constant M
1.3
1.3
V/°C
Gain (M) @ 900 nm
-
100
-
100
Responsivity @ 900 nm
55
60
-
55
60
A/W
Total Dark Current, Id
-
0.05
0.5
0.1
1
nA
Noise Current, in, f=10kHz, Δf=1.0Hz
-
0.1
-
-
0.1
-
pA/√Hz
Capacitance, Cd
-
0.6
-
-
1
-
pF
Rise & Fall Time,
RL=50 Ω, 10%-90%-10% points
-
0.9
-
0.9
-
ns
Cut-off frequency (-3 dB)
-
380
-
-
380
-
MHz
Storage Temperature
-50
+100
-50
+100
°C
Operating Temperature
-40
+85
-40
+85
°C
Table 2. Electrical Characteristics at TA = 22 °C; at operating voltage-Vop – devices with optical bandpass filters
Parameter
C30737LH-230-81
(635nm filter #1)
C30737LH-500-81
(635nm filter #1)
Min
Typical
Max
Min
Typical
Max
Unit
Active Area Diameter
230
500
μm
Peak Sensitivity Wavelength
635
635
nm
Breakdown Voltage, VBR
120
210
120
210
V
Temperature Coefficient of VR, for Constant M
-
0.5
-
-
0.5
-
V/°C
Gain (M) @ 635 nm
-
100
-
-
100
-
Responsivity @ 635 nm
-
35
-
-
35
-
A/W
Total Dark Current, Id
-
0.05
0.5
-
0.1
1
nA
Noise Current, in, f=10kHz, Δf=1.0Hz
-
0.1
-
-
0.1
-
pA/√Hz
Capacitance, Cd
-
1
-
-
2
-
pF
Rise & Fall Time,
RL=50 Ω, 10%-90%-10% points
-
0.2
-
-
0.3
-
ns
Cut-off frequency (-3 dB)
-
1.5
-
-
1.3
-
GHz
Storage Temperature
-50
+100
-50
+100
°C
Operating Temperature
-40
+85
-40
+85
°C
Parameter
C30737LH-230-92
C30737EH-230-92
(905nm filter #2)
C30737LH-500-92
C30737EH-500-92
(905nm filter #2)
Min
Typical
Max
Min
Typical
Max
Unit
Active Area Diameter
230
500
μm
Peak Sensitivity Wavelength
905
905
nm
Breakdown Voltage, VBR
180
260
180
260
V
Temperature Coefficient of VR, for Constant M
1.3
1.3
V/°C
Gain (M) @ 900nm
-
100
-
100
Responsivity @ 900 nm
55
60
-
55
60
A/W
Total Dark Current, Id
-
0.05
0.5
0.1
1
nA
Noise Current, in, f=10kHz, Δf=1.0Hz
-
0.1
-
-
0.1
-
pA/√Hz
Capacitance, Cd
-
0.6
-
-
1
-
pF
Rise & Fall Time,
RL=50 Ω, 10%-90%-10% points
-
0.9
-
-
0.9
-
ns
Cut-off frequency (-3 dB)
-
380
-
-
380
-
MHz
Storage Temperature
-50
+100
-50
+100
°C
Operating Temperature
-40
+85
-40
+85
°C
Parameter
C30737LH-230-83
(650nm filter #3)
C30737LH-500-83
(650nm filter #3)
Min
Typical
Max
Min
Typical
Max
Unit
Active Area Diameter
230
500
μm
Peak Sensitivity Wavelength
650
650
nm
Breakdown Voltage, VBR
120
210
120
210
V
Temperature Coefficient of VR, for Constant M
-
0.5
-
-
0.5
-
V/°C
Gain (M) @ 650 nm
-
100
-
-
100
-
Responsivity @ 650 nm
-
35
-
-
35
-
A/W
Total Dark Current, Id
-
0.05
0.5
-
0.1
1
nA
Noise Current, in, f=10kHz, Δf=1.0Hz
-
0.1
-
-
0.1
-
pA/√Hz
Capacitance, Cd
-
1
-
-
2
-
pF
Rise & Fall Time,
RL=50 Ω, 10%-90%-10% points
-
0.2
-
-
0.3
-
ns
Cut-off frequency (-3 dB)
-
1.5
-
-
1.3
-
GHz
Storage Temperature
-50
+100
-50
+100
°C
Operating Temperature
-40
+85
-40
+85
°C
Table 3. Filter Transmission Characteristics
Filter #
1
2
3
Nominal center wavelength
635nm note 1
905nm note 2
650nm note 3
Transmission ≥ 85%
Transmission window
623…652nm
638…669nm
Transmission ≥ 85%
50% cut-on wavelength
606…617nm
870…890nm
622…634nm
50% cut-off wavelength
657…669nm
929…949nm
673...685nm
Average transmission from 300 nm to bandpass region
<1% @
<593nm
<1% @
<850nm
<1% @
<608nm
Average transmission from bandpass region to 1100 nm
<1% @
>682nm
<1% @
>979nm
<1% @
>699nm
Wavelength drift
<+0.5nm/°C
<+0.5nm/°C
<+0.5nm/°C
for range -10°C…+50°C
Typical filter thickness
0.3mm
0.3mm
0.3mm
Material: Borosilicate glass
Notes:
1. The 635nm filter is designed to work optimally with the 635nm red laser commonly used in laser meters or laser pointers.
2. The 905nm filter is designed to work optimally with the Excelitas 905nm Pulse Laser Diodes PGEW and PGA series.
The 650nm filter is designed to work optimally with the 650nm red laser commonly used in laser meters or laser pointers.
Table 4 Ordering Guide
C30737
AA -
BBB -
C
D(1)
E (2)(3)
Epitaxial structure Si APD
C30737
Plastic TO-18 can (P-package)
PH -
Flat window hermetic TO-18 package
EH
Leadless ceramic carrier side-looking package
CH -
Leadless ceramic carrier (3 x 3 mm 2 LCC) top-looking package
LH -
Ultra-compact (1.75 x 2 mm) FR4 top-looking package
MH-
Active area diameter = 230 μm
230 -
Active area diameter = 500 μm
500 -
Optimum chip response λ @ 800 nm
8
Optimum chip response λ @ 900 nm
9
No filter
0
With 635 nm filter
1
With 905 nm filter
2
With 650 nm filter
3
V bd = 120 - 160 V
A
V bd = 160 - 200 V
B
V bd = 180 - 220 V
C
V bd = 220 - 260 V
D
V bd = whole V bd range (no V bd binning)
N
(1) Filter option is only available for the LCC (LH) package option.
(2) V bd binning /screening is available in these options:
A and B are available for APD with optimum response λ @ 800nm
C and D are available for APD with optimum response λ @ 900nm
N is available for all types
(3) Bandwidth tends to be lower for lower voltage bins. Contact factory for further information.
(4) For binning please allow 2 V overlap between bins for the 800nm versions and 5 V for the 900nm versions.
Example: C30737LH-230-92C: A C30737 in the 3 x 3mm ceramic carrier package, with optimum 900nm response wavelength, with 905nm filter and selected for V bd of 180V - 220V.
商品属性 [波长] 500 – 1000 nm