Alternate Source/Second Source Photodiodes VTD205H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a cast epoxy sidelooker, similar in outline to the TO-92 package.The package material filters out all visible light but
passes infrared. These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Operating Temperature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTD205H
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
940 nm, H = 0.5 mW/cm2
15
25
µA
TC ISC
ISCTemperatureCoefficient
2856 K
.20
%/°C
VOC
Open Circuit Voltage
940 nm, H = 0.5 mW/cm2
250
350
mV
TC VOC
VOCTemperatureCoefficient
2856 K
-2.6
mV/°C
ID
Dark Current
H= 0, VR = 10 V
2
30
nA
CJ
JunctionCapacitance
H = 0, VR = 0 v, 1 MHz
72
pF
tR/tF
Rise/Fall Time @RL= 50W
VR= 5 V, 850 nm
20
nsec
SR
Sensitivity
@ Peak
0.6
A/W
λrange
Spectral Application Range
800
1100
nm
λp
Spectral Response - Peak
925
nm
VBR
Breakdown Voltage
20
50
V
θ1/2
Angular Resp.-50%Resp. Pt.
±60
Degrees
商品属性 [波长] 800-1100nm [封装方式] TO-92