Alternate Source/Second Source Photodiodes VTD205KH
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a waterclear,cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Operating Temperature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTD205KH
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
1000 Lux, 2850K
50
80
µA
TC ISC
ISCTemperature Coefficient
2856 K
.20
%/°C
VOC
Open Circuit Voltage
940 nm, H= 0.5 mW/cm2
310
365
mV
TC VOC
VOCTemperatureCoefficient
2856 K
-2.6
mV/°C
ID
Dark Current
H= 0, VR= 10V
2
30
nA
CJ
JunctionCapacitance
H= 0, VR= 0V, 1 MHz
72
pF
tR/tF
Rise/Fall Time@RL= 50W
VR= 5 V, 850 nm
20
nsec
SR
Sensitivity
@ Peak
0.6
A/W
λrange
Spectral Application Range
400
1100
nm
λp
Spectral Response - Peak
925
nm
VBR
Breakdown Voltage
20
50
V
q1/2
Angular Resp.-50%Resp. Pt.
±60
Degrees
商品属性 [波长] 400-1100nm [封装方式] TO-92