SILICON PHOTODIODE VTD34FSMH
(BPW 34F INDUSTRY EQUIVALENT)
FEATURES
· Infrared transmiting package
· High sensitivity
· Low capacitance
· Fast response
· Low noise
PRODUCT DESCRIPTION
Planar silicon photodiode in an infrared transmitting, visible blocking
molded plastic package.This P on N photodiode is designed to provide
excellent sensitivity at low levels of irradiance. Linearity is assured by
its high shunt impedance and low series resistance.Due to their low
junction capacitance, these devices exhibit fast response, even with
relatively high load resistances.
ELECTRO-OPTICAL CHARACTERISTICS @ 25° C
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
RESPONSIVITY @ 0.5 mW/cm2, 940 nm
Re
15
μA
DARK CURRENT @ VR = 10 V
ID
30
nA
REVERSE BREAKDOWN VOLTAGE @ 100 mA
VBR
40
Volts
JUNCTION CAPACITANCE @ 1 MHz, VR = 3 V
CJ
80
pF
RISE / FALL TIME @ 1 kW LOAD, VR = 10 V, 833 nm
tR / tF
50
nsec
ACCEPTANCE ANGLE (BETWEEN 50% RESPONSE)
θ1/2
±50
Degrees
PACKAGE DIMENSIONS inch (mm)
GENERAL CHARACTERISTICS
PARAMETER
SYMBOL
TYPICAL RATING
UNITS
OPEN CIRCUIT VOLTAGE @ 0.5 mW/cm2, 940 nm
VOC
350
mV
PEAK SPECTRAL RESPONSE @ 25°C
lpk
940
nm
SPECTRAL APPLICATION RANGE
lRANGE
725 - 1150
nm
RADIOMETRIC SENSITIVITY @ PEAK, 25°C
SRPK
0.60
A / W
NOISE EQUIVALENT POWER
NEP
4.8 x 10-14
W /√Hz
SPECIFIC DETECTIVITY
D*
5.7 x 1012
cm√Hz/W
TEMPERATURE COEFFICIENT
OPEN CIRCUIT VOLTAGE @ 2850 K SOURCE
DARK CURRENT
TC VOC
TC ID
- 2.0
+15.0
mV / °C
% / °C
TEMPERATURE RANGE
OPERATING
STORAGE
TO
TS
- 20 to +80
- 20 to +80
°C
°C
商品属性 [波长] 725-1150nm