VTP Process Photodiodes VTP100H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light). These diodes exhibit low dark current and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Operating Temperature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITION
VTP100H
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
35
55
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.24
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
300
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 10 V
30
nA
RSH
Shunt Resistance
H = 0, V = 10mV
.25
GW
CJ
JunctionCapacitance
H = 0, V = 3V
50
pF
Re
Responsivity
940 nm
.036
.047
A/(W/cm2)
SR
Sensitivity
@Peak
.50
A/W
λrange
Spectral Application Range
725
1150
nm
λp
Spectral Response - Peak
925
nm
VBR
Breakdown Voltage
30
140
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±70
Degrees
NEP
Noise Equivalent Power
2.5 x 10-14 (Typ.)
W /√Hz
D*
Specific Detectivity
1.1 x 1013 (Typ.)
cm √Hz / W
商品属性 [波长] 725-1150nm