VTP Process Photodiodes VTP1112H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a lensed. dual lead TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 110°C
Operating Temperature: -40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITION
VTP1112H
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
30
90
µA
TC ISC
ISCTemperature Coefficient
2850 K
.20
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
350
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 50 V
7
nA
RSH
Shunt Resistance
H = 0, V = 10mV
.5
GW
CJ
JunctionCapacitance
H= 0, V = 15V
6
pF
Re
Responsivity
940 nm
.033
A/(W/cm2)
SR
Sensitivity
@Peak
.55
A/W
λrange
Spectral Application Range
400
1150
nm
λp
Spectral Response - Peak
925
nm
VBR
Breakdown Voltage
50
140
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±15
Degrees
NEP
Noise Equivalent Power
8.7 x 10-14 (Typ.)
W /√Hz
D*
Specific Detectivity
1.5 x 1012(Typ.)
cm √Hz/ W
商品属性 [波长] 400-1150nm [封装方式] TO-46