VTP Process Photodiodes VTP1188SH
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Operating Temperature: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTP11188SH
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
200
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.20
%/°C
ISC
Short Circuit Current
100 µW/cm2, 880 nm
13
25
µA
VOC
Open Circuit Voltage
H= 100 fc, 2850K
.33
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 10 mV
3
30
nA
RSH
Shunt Resistance
H = 0, V = 10mV
67
GW
TC RSH
RSHTemperature Coefficient
H= 0, V = 10mV
-11
%/°C
CJ
JunctionCapacitance
H = 0, V =0 V
.18
.30
nF
λrange
Spectral Application Range
400
1100
nm
λp
Spectral Response - Peak
925
nm
SR
Sensitivity
@Peak
.55
A/W
商品属性 [波长] 400-1100nm