SILICON PHOTODIODE VTP1332F
FEATURES
· Low dark current
· Fast response
· Infrared transmiting/visible blocking spectral range
· Low junction capacitance
PRODUCT DESCRIPTION
This VTP processed P on N planar silicon photodiode is housed in
an IR transmitting, T-1 3/4 endlooking package.
These diodes exhibit low dark current under reverse bias. The VTP
process offers low capacitance, resulting in fast response times.
ELECTRO-OPTICAL CHARACTERISTICS @ 25° C
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
SHORT CIRCUIT CURRENT @ 100 fc, 2850 K
ISC
17
mA
SENSITIVITY @ PEAK
SR
0.6
A/W
DARK CURRENT @ VR = 10 V
ID
25
nA
REVERSE BREAKDOWN VOLTAGE @ 100 mA
VBR
30
V
JUNCTION CAPACITANCE @ VR = 0 V, 1 MHz
CJ
100
pF
ANGULAR RESPONSE (50% RESPONSE POINT)
θ1/2
±70
Degrees
PACKAGE DIMENSIONS inch (mm)
GENERAL CHARACTERISTICS
PARAMETER
SYMBOL
TYPICAL RATING
UNITS
OPEN CIRCUIT VOLTAGE @ 100 fc, 2850 K
VOC
420
mV
SOURCE PEAK SPECTRAL RESPONSE @ 25°C
λpk
920
nm
SPECTRAL APPLICATION RANGE
λrange
725 - 1100
nm
RISE/FALL TIMES @ 800 nm, VR =10 V, RL = 50 W
tR / tF
20
ns
TEMPERATURE COEFFICIENTSHORT CIRCUIT
CURRENT @ 2850 K SOURCE
DARK CURRENT @ VR = 10
VOPEN CIRCUIT VOLTAGE
TC ISC
TC ID
TC VOC
+0.20
+11.0
-2.0
% / °C
% / °C
mV/ °C
TEMPERATURE RANGE, OPERATING & STORAGE
TAMB
- 40 to +100
°C
TYPICAL CHARACTERISTIC CURVES
商品属性 [波长] 725 - 1100nm