VTP Process Photodiodes VTP1232H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
This photodiode features the largest detection area available in a clear, endlooking T-1¾ package. Combined with excellent dark current, it can fulfill the demands of many difficult applications.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Operating Temperature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTP1232H
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
100
µA
TC ISC
ISCTemperature Coefficient
2850 K
0.20
%/°C
Re
Responsivity
880 nm
0.06
0.076
A/(W/cm2)
VOC
Open Circuit Voltage
H= 100 fc, 2850K
.42
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 10 V
25
nA
CJ
JunctionCapacitance
H= 0, V = 0V
.18
.30
nF
λrange
Spectral Application Range
400
1100
nm
λp
Spectral Response - Peak
920
nm
SR
Sensitivity
@ Peak
0.60
A/W
商品属性 [波长] 400-1100nm