SILICON PHOTODIODE VTP1332
FEATURES
· Low dark current · Fast response · Infrared transmitting/visible blocking spectral range · Low junction capacitance
PRODUCT DESCRIPTION
This VTP processed P on N planar silicon photodiode is housed in an IR transmitting, T-1 3/4 end looking package.
These diodes exhibit low dark current under reverse bias. The VTP process offers low capacitance, resulting in fast response times.
ELECTRO-OPTICAL CHARACTERISTICS @ 25° C
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNITS
SHORT CIRCUIT CURRENT @ 100 fc, 2850 K
ISC 75
mA
RESPONSIVITY @ 880 nm
Re 0.050
0.065
A/(W/cm2)
DARK CURRENT @ VR = 10 V
ID 25
nA
REVERSE BREAKDOWN VOLTAGE @ 100 mA
VBR 30
V
JUNCTION CAPACITANCE @ VR = 0 V, 1 MHz CJ 100 pF ANGULAR RESPONSE (50% RESPONSE POINT)
θ1/2 ±20
Degrees
PACKAGE DIMENSIONS inch (mm)
GENERAL CHARACTERISTICS
PARAMETER
SYMBOL
TYPICAL RATING
UNITS
OPEN CIRCUIT VOLTAGE @ 100 fc, 2850 K SOURCE
VOC
420
mV
PEAK SPECTRAL RESPONSE @ 25°C
λpk
920
nm
SPECTRAL APPLICATION RANGE
λrange
725 - 1100
nm
RISE/FALL TIMES @ 800 nm, VR =10 V, RL = 50 W
tR / tF
20
ns
TEMPERATURE COEFFICIENT
SHORT CIRCUIT CURRENT @ 2850 K SOURCE
TC ISC
+0.20
% / °C
DARK CURRENT @ VR = 10 V
TC ID
+11.0
% / °C
OPEN CIRCUIT VOLTAGE
TC VOC
-2.0
mV/ °C
TEMPERATURE RANGE, OPERATING & STORAGE
TAMB
- 40 to +100
°C
TYPICAL CHARACTERISTIC CURVES
Specifications subject to change without prior notice. Information supplied byExcelitas Technologies is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. The user should determine the suitability of this product in his own application. No patent rights are granted to any devices or circuits described herein.
商品属性 [波长] 725 - 1100nm [封装方式] T-1 3/4 end looking