VTP Process Photodiodes VTP3310LAH
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a clear,long T-1, endlooking package. These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Operating Temperature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITION
VTP3310LAH
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
24
36
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.20
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
350
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 50 V
35
nA
RSH
Shunt Resistance
H = 0, V = 10mV
10
GW
CJ
JunctionCapacitance
H = 0, V = 3V
25
pF
Re
Responsivity
940 nm
.015
A/(W/cm2)
SR
Sensitivity
@Peak
.55
A/W
λrange
Spectral Application Range
400
1150
nm
λp
Spectral Response - Peak
925
nm
VBR
Breakdown Voltage
30
140
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±20
Degrees
NEP
Noise Equivalent Power
1.9 x 10-13 (Typ.)
W /√Hz
D*
Specific Detectivity
5.3 x 1011 (Typ.)
cm √Hz/ W
商品属性 [波长] 400-1150nm [封装方式] long T-1, end looking