VTP Process Photodiodes VTP8350H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Operating Temperature: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITION
VTP8350H
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
65
80
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.20
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
350
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 10 V
30
nA
RSH
Shunt Resistance
H = 0, V = 10mV
100
GW
CJ
JunctionCapacitance
H = 0, V = 3V
50
pF
Re
Responsivity
940 nm
.06
A/(W/cm2)
SR
Sensitivity
@Peak
.55
A/W
λrange
Spectral Application Range
400
1150
nm
λp
Spectral Response - Peak
925
nm
VBR
Breakdown Voltage
33
140
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±60
Degrees
NEP
Noise Equivalent Power
1.8 x 10-13 (Typ.)
W /√ Hz
D*
Specific Detectivity
1.5 x 1012 (Typ.)
cm √Hz / W
商品属性 [波长] 400-1150nm