VTP Process Photodiodes VTP8551H
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 85°C
Operating Temperature: -40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITION
VTP8551H
UNITS
Min.
Typ.
Max.
ISC
Short Circuit Current
H= 100 fc, 2850K
50
70
µA
TC ISC
ISCTemperatureCoefficient
2850 K
.20
%/°C
VOC
Open Circuit Voltage
H= 100 fc, 2850K
350
mV
TC VOC
VOCTemperatureCoefficient
2850 K
-2.0
mV/°C
ID
Dark Current
H= 0, VR = 10 V
30
nA
RSH
Shunt Resistance
H = 0, V = 10mV
.15
GW
CJ
JunctionCapacitance
H = 0, V = 3V
50
pF
Re
Responsivity
940 nm
.05
A/(W/cm2)
SR
Sensitivity
@Peak
.55
A/W
lrange
Spectral Application Range
400
1150
nm
lp
Spectral Response - Peak
925
nm
VBR
Breakdown Voltage
33
140
V
θ1/2
Angular Resp. - 50%Resp. Pt.
±50
Degrees
NEP
Noise Equivalent Power
1.8 x 10-13 (Typ.)
W/√ Hz
D*
Specific Detectivity
1.5 x 1012 (Typ.)
cm √Hz/ W
商品属性 [波长] 400-1150nm